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| bat 41 small signal schottky diode description general purpose metal to silicon diode featuring very low turn-on voltage and fast switching. this device has integrated protection against ex- cessive voltage such as electrostatic discharges. do 35 (glass) symbol parameter value unit v rrm repetitive peak reverse voltage 100 v i f forward continuous current* t a = 25 c 100 ma i frm repetitive peak forward current* t p 1s d 0.5 350 ma i fsm surge non repetitive forward current* t p 10ms 750 ma p tot power dissipation* t a = 95 c 100 mw t stg t j storage and junction temperature range - 65 to +150 - 65 to +125 c c t l maximum lead temperature for soldering during 10s at 4mm from case 230 c absolute ratings (limiting values) symbol test conditions value unit r th(j-a) junction-ambient* 300 c/w thermal resistance * on infinite heatsink with 4mm lead length * * pulse test: t p 300 m s d < 2% . symbol test conditions min. typ. max. unit v br t j = 25 ci r = 100 m a 100 v v f * * t j = 25 ci f = 1ma 0.4 0.45 v t j = 25 ci f = 200ma 1 i r * * t j = 25 c v r = 50v 0.1 m a t j = 100 c 20 static characteristics electrical characteristics symbol test conditions min. typ. max. unit c t j = 25 cv r = 1v f = 1mhz 2pf dynamic characteristics 1 ki semiconductor.co
2 figure 1. forward current versus forward voltage at different temperatures (typical values). figure 2. forward current versus forward voltage (typical values). figure 3. reverse current versus junction temperature. figure 4. reverse current versus continuous reverse voltage (typical values). bat 41 figure 5. capacitance c versus reverse applied voltage v r (typical values). 3 bat 41 4 cooling method : by convection and conduction marking: clear, ring at cathode end. weight: 0.15g package mechanical data do 35 glass note 2 ba b c note 1 note 1 d d o / o / o / e e ref. dimensions millimeters inches min. max. min. max. a 3.05 4.50 0.120 0.177 b 1.53 2.00 0.060 0.079 c 12.7 0.500 d 0.458 0.558 0.018 0.022 bat 41 |
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